发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT MANUFACTURING METHOD, SEMICONDUCTOR STORAGE DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit manufacturing method in which the number of switches for performing power gating is reduced.SOLUTION: A method of manufacturing a semiconductor integrated circuit includes a formation step of forming a switch for shutting off power supplied to ways allocated to a RAM macro for each way. For example, the ways are preferably allocated in either a word direction or a bit direction, whichever the number of ways allocated for each RAM macro is larger. For example, the method preferably includes a shut-off process for shutting off power supplied to a specific way allocated to the RAM macro by using the switch.</p>
申请公布号 JP2015095272(A) 申请公布日期 2015.05.18
申请号 JP20130236157 申请日期 2013.11.14
申请人 FUJITSU LTD 发明人 RIN YASUHIDE;ITO MANABU
分类号 G11C11/413;G11C29/00 主分类号 G11C11/413
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