| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is formed by a nitride semiconductor on an Si substrate and the like and has high reliability.SOLUTION: A semiconductor device comprises: a first semiconductor layer 21 formed by a nitride semiconductor on a substrate 10; a second semiconductor layer 22 formed by a nitride semiconductor on the first semiconductor layer 21; element isolation regions 40a, 40b which are formed in a part of the second semiconductor layer 22 and first semiconductor layer 21; a gate electrode 31, a source electrode 32 and a drain electrode 33 which are formed on the second semiconductor layer 22 and the element isolation regions 40a, 40b; and drain field plates 33a formed above the element isolation regions 40a, 40b via spaces to become a part of the drain electrode 33. |
