发明名称 METHOD OF MANUFACTURING THROUGH ELECTRODE SUBSTRATE, THROUGH ELECTRODE SUBSTRATE, AND SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To enhance adhesion of a conductive layer in a through hole of a through electrode substrate.SOLUTION: A method of manufacturing a through electrode substrate includes a step for preparing a substrate having a first surface and a second surface on the opposite side of the first surface, and a through hole is formed to penetrate the first and second surfaces, a step for forming a first conductivity adhesion layer on the first surface and at a part of the sidewall of the through hole on the first surface side, a step for forming a second conductivity adhesion layer on the second surface and at a part of the sidewall of the through hole on the second surface side, a step for forming a seed layer arranged in contact with the first conductivity adhesion layer and second conductivity adhesion layer, and in contact with the sidewall of the through hole exposed from the first conductivity adhesion layer and second conductivity adhesion layer, and a step for forming a conductive layer on the seed layer by electrolytic plating for supplying power to the seed layer.</p>
申请公布号 JP2015095590(A) 申请公布日期 2015.05.18
申请号 JP20130234994 申请日期 2013.11.13
申请人 DAINIPPON PRINTING CO LTD 发明人 NAKAYAMA KOICHI;TAKANO TAKAMASA;SUZUKI MIYUKI;KURAMOCHI SATORU
分类号 H05K3/40;H01L23/12;H01L23/32;H01L25/065;H01L25/07;H01L25/18;H05K1/11;H05K1/18;H05K3/42 主分类号 H05K3/40
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