SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an art to reduce a load on a manufacturing process while inhibiting quality degradation of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: a preparation process S1 of growing a GaN-based semiconductor layer on a GaN substrate to form a laminate in which a plurality of island-shaped long GaN-based semiconductor layers are arranged on the GaN substrate in a stripe shape; and a device formation process S2 of forming a semiconductor device on a top face of the GaN-based semiconductor layers.