| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem in a conventional semiconductor device that resistance between source electrodes cannot be decreased to a satisfactory extent.SOLUTION: According to one embodiment, in a semiconductor device, each of a first region where a first transistor MOS1 is formed and a second region where a second transistor MOS2 is formed is separated into two and more regions and the first regions and the second regions are alternately arranged. In a semiconductor device according to one embodiment, the second regions are set to have a total area larger than that of the first regions or have the separation number larger then that of the first regions. In a semiconductor device according to one embodiment, a gate pad G1 of the first transistor MOS1 and a gate pad G2 of the second transistor MOS2 are provided in the second regions. |
