CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD BY USE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide: a chemical mechanical polishing pad by which all of a higher polishing speed in CMP, the increase in flatness of a face to be polished, and the reduction in polishing defect (i.e. a scratch) can be achieved; and which enables the improvement in dressing property; and a chemical mechanical polishing method by use of such a chemical mechanical polishing pad.SOLUTION: A chemical mechanical polishing pad according to the present invention comprises a polishing layer including a hardened material of epoxy resin. The hardened material of epoxy resin is produced by hardening a composition for a polishing layer which includes (A) an epoxy resin and (B) a stress-lowering agent.