| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which is advantageous in excellently detecting light beams of a first wavelength band and a second wavelength band for a solid state imaging device capable of detecting the light beams of the respective wavelength bands.SOLUTION: A solid state imaging device has a plurality of pixels arranged in a matrix including at least first pixels which detect light beams of a first wavelength band and second pixels which detect light beams of a second wavelength band including a wavelength band on the longer wavelength side of the first wavelength band. The first pixels and second pixels each include a photoelectric conversion part, an FD part, a transfer transistor which transfers electric charges from the photoelectric conversion part to the FD part, and an amplifier transistor which outputs a signal corresponding to the potential of the FD part. The first pixels and second pixels are provided with transfer control lines which control transfer transistors of the first pixels and transfer control lines which control transfer transistors of the second pixels independently, the transfer control lines belonging to the same row. The transfer transistors are so controlled that the first pixels and second pixels are different in charge accumulation time. |
