| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress a rise in Vby suppressing diffusion of oxygen from an element isolation region to an active region.SOLUTION: A semiconductor device includes: an element isolation region in which an insulating film containing oxygen is buried on a first main surface side of a semiconductor substrate; an active region of the semiconductor substrate, adjacent to the element isolation region; a nitrogen-containing layer disposed within the element isolation region; a high dielectric constant insulating film provided on the nitrogen-containing layer and the active region; and a metal film provided on the high dielectric constant insulating film.</p> |
