发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing method capable of detaching a substrate from an electrostatic chuck.SOLUTION: A substrate processing method using a substrate processing apparatus which has an electrostatic chuck including an insulating member having an electrode inside and performs a plasma treatment on a substrate placed on the electrostatic chuck comprises: a first process of supplying a heat transfer gas at a second gas pressure to a rear face of the substrate while performing plasma neutralization on the substrate in use of plasma of a process gas having a first gas pressure.
申请公布号 JP2015095396(A) 申请公布日期 2015.05.18
申请号 JP20130234871 申请日期 2013.11.13
申请人 TOKYO ELECTRON LTD 发明人 URAKAWA MICHIFUMI;TAKAHASHI RUI;OGASAWARA MASAHIRO
分类号 H05H1/46;H01L21/3065;H01L21/683 主分类号 H05H1/46
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