SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device with improved withstand voltage characteristics.SOLUTION: A MOSFET1 comprises: a silicon carbide layer 11 provided with a trench TR which is opened on the side of one main surface 11A and has a sidewall surface SW forming an obtuse angle with respect to the one main surface 11A; and an insulating film 20 extending from the inside of the trench TR to the one main surface 11A. The sidewall surface SW includes a channel region CH. The thickness of an upper portion of the trench TR, which is the shortest distance from an upper end portion UT to a surface of the insulating film 20, is greater than the thickness of the insulating film 20 on the channel region CH.