发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Suggested are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a through electrode which practically penetrates a substrate and has an end which protrudes from a surface, a passivation layer which covers the surface of the substrate and has a plug hole which exposes the surface of the end of the through electrode to a bottom part, and a barrier plug which is filled in the plug hole. |
申请公布号 |
KR20150053088(A) |
申请公布日期 |
2015.05.15 |
申请号 |
KR20130134855 |
申请日期 |
2013.11.07 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK, SUNG SU;MOON, JONG KYU;PARK, WAN CHOON;KIM, BAE YONG |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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