METHOD FOR FORMING AN ELECTRODE ON N-TYPE NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACUTRING THE SAME

摘要

According to one side of the present invention, a method for forming an electrode on an n-type nitride semiconductor is provided to provide a new technology to treat a surface where the electrode will be formed to generate an ohmic contact with the n-type nitride semiconductor, by comprising the steps of: treating the surface of the n-type nitride semiconductor with inert gas plasma for a nitrogen air gap surface layer lacking a nitrogen substance to be formed; treating the surface where the nitrogen air gap surface layer is formed with gas plasma containing oxygen for a nitride film with oxygen to be formed; and forming the electrode on the nitride film with oxygen.