Three Dimensional Nonvolatile Memory Cell Structure with Upper Body Connection

摘要

A three-dimensional integrated circuit non-volatile memory array includes a memory array of vertical channel NAND flash strings connected between a substrate source line and upper layer connection lines which each include n-type drain regions and p-type body line contact regions alternately disposed on each side of undoped or lightly doped string body regions so that each NAND flash string includes a vertical string body portion connected to a horizontal string body portion formed from the string body regions of the upper body connection lines.

主权项

1. A non-volatile memory device, comprising:
a substrate comprising a source line region of a first conductivity type formed at a surface of the substrate; and a NAND flash memory array formed over the substrate comprising a plurality of NAND flash strings, each comprising a vertical channel string body connected between the source line region and an upper semiconductor layer which extends parallel to the surface of the substrate, where the upper semiconductor layer comprises:
a horizontal string body region connected to each vertical channel string body,a drain region of the first conductivity type connected to each horizontal string body region, anda body line contact region of a second, opposite conductivity type connected to each horizontal string body region.