发明名称 BAD BLOCK COMPENSATION FOR SOLID STATE STORAGE DEVICES
摘要 Technologies and implementations for reusing bad blocks in a solid state drive are generally disclosed.
申请公布号 US2015131379(A1) 申请公布日期 2015.05.14
申请号 US201214235406 申请日期 2012.07.30
申请人 EMPIRE TECHNOLOGY DEVELOPMENT LLC 发明人 Oh Hyun Oh
分类号 G11C16/10;G11C29/04;G11C16/08 主分类号 G11C16/10
代理机构 代理人
主权项 1. A method for a memory control module, the method comprising: identifying an address associated with one or more bad memory cells in a memory page of a solid state storage device; determining a first address value of a first memory cell in the memorypage based at least in part on the address of the one or more bad memory cells of the solid state storage device and a number of correctable bad memory cells in the memorypage; determining a usable size of the memory page based at least in part on the first address value; and storing the first address value and the determined usable size, wherein the first address value and the determined usable size facilitates utilization of the memory page of the solid state storage device.
地址 Wilmington DE US