SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

A semiconductor device and a method for fabricating the semiconductor device are provided in the present disclosure. The semiconductor device includes a substrate including a first area and a second area divided by a shallow trench isolation (STI) area, a first dummy structure on the STI area, a second dummy structure located on the STI area, a first semiconductor structure on the first area, and a second semiconductor structure on the second area of the substrate including a high-k dielectric layer and a metal gate layer over the high-k dielectric layer. The method for fabricating the semiconductor device is a high-k dielectric first, high-k metal gate last procedure.

主权项

1. A semiconductor device comprising:
a substrate having a first area and a second area divided by a shallow trench isolation (STI) area; a first dummy structure on the STI area at the side of the first area of the substrate, comprising a first dummy gate stack; a second dummy structure on the STI area at the side of the second area of the substrate, comprising a second dummy gate stack with a high-k dielectric layer, a first spacer next to the second dummy gate stack, and a third dummy gate stack with a trench stack next to the first spacer; a first semiconductor structure on the first area of the substrate, comprising a first gate structure with a second intermediate layer and a second conductive layer over the second intermediate layer; and a second semiconductor structure on the second area of the substrate, comprising a high-k dielectric layer and a metal gate layer over the high-k dielectric layer.