| 发明名称 |
MECHANISM FOR FORMING GATE |
| 摘要 |
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate. The semiconductor device also includes an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device includes a gate over the semiconductor substrate. The gate has an intermediate portion over the active region and two end portions connected to the intermediate portion. Each of the end portions has a first gate length longer than a second gate length of the intermediate portion and is located over the isolation structure. |
| 申请公布号 |
US2015129940(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201314080368 |
申请日期 |
2013.11.14 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
JENG Jung-Chi;CHEN I-Chih;KUO Wen-Chang;CHEN Ying-Hao;HSIAO Ru-Shang;HUANG Chih-Mu |
| 分类号 |
H01L29/49;H01L21/3213;H01L29/06 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate; and a gate over the semiconductor substrate, wherein the gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, the end portions are located over the isolation structure, and one of the end portions has a first gate length longer than a second gate length of the intermediate portion. |
| 地址 |
Hsin-Chu TW |
