发明名称 Silicon Wafer Coated With A Passivation Layer
摘要 Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.
申请公布号 US2015129027(A1) 申请公布日期 2015.05.14
申请号 US201314402320 申请日期 2013.04.25
申请人 Dow Corning Corporaton 发明人 Asad Syed Salman;Beaucarne Guy;Descamps Pierre;Kaiser Vincent;Leempoel Patrick
分类号 H01L31/0216;H01L31/18;H01L31/0224;H01L23/00 主分类号 H01L31/0216
代理机构 代理人
主权项 1. A silicon wafer coated with silicon oxide, wherein the silicon oxide has negative fixed charges and comprises an interface region and a bulk region more remote from the silicon wafer than the interface region, wherein the bulk region has the formula SiOx where x has a mean value (the bulk value) greater than 2 and less than 2.6 as measured by EELS-TEM, and the interface region has the formula SiOy wherein the ratio y of oxygen to silicon gradually increases over the thickness of the interface region from zero at the silicon wafer to x in the bulk region, the thickness of the interface region being in the range 5 to 20 nm measured by TEM.
地址 Midland MI US