发明名称 |
Silicon Wafer Coated With A Passivation Layer |
摘要 |
Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy. |
申请公布号 |
US2015129027(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201314402320 |
申请日期 |
2013.04.25 |
申请人 |
Dow Corning Corporaton |
发明人 |
Asad Syed Salman;Beaucarne Guy;Descamps Pierre;Kaiser Vincent;Leempoel Patrick |
分类号 |
H01L31/0216;H01L31/18;H01L31/0224;H01L23/00 |
主分类号 |
H01L31/0216 |
代理机构 |
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代理人 |
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主权项 |
1. A silicon wafer coated with silicon oxide, wherein the silicon oxide has negative fixed charges and comprises an interface region and a bulk region more remote from the silicon wafer than the interface region, wherein the bulk region has the formula SiOx where x has a mean value (the bulk value) greater than 2 and less than 2.6 as measured by EELS-TEM, and the interface region has the formula SiOy wherein the ratio y of oxygen to silicon gradually increases over the thickness of the interface region from zero at the silicon wafer to x in the bulk region, the thickness of the interface region being in the range 5 to 20 nm measured by TEM. |
地址 |
Midland MI US |