| 摘要 |
The present invention belongs to the field of manufacturing process of a film transistor, and provides a low-temperature polycrystalline silicon film transistor array substrate, a manufacturing method thereof, and a display apparatus. The low-temperature polycrystalline silicon film transistor array substrate comprises contact holes (180, 181). A source (170) and a drain (171) of the array substrate are connected to an active layer (13) through the contact holes (180, 181). Conductive patterns (120, 121) connected to the active layer (13) are disposed at the bottom of the contact holes (180, 181). When etching of the contact holes (180, 181) is completed, the source (170) and the drain (171) of the array substrate can form a good ohmic contact with the active layer (13), thereby ensuring display quality of the display apparatus. |
