Composite substrate with a protective layer for preventing metal from diffusing

摘要

The present application discloses a composite substrate with a protective layer for preventing metal from diffusing, comprising: a thermally and electrically conductive layer (2) having a melting point of greater than 1000° C., and a GaN mono-crystalline layer (1) located on the thermally and electrically conductive layer (2). At least the side wall of the composite substrate is cladded with a protective layer (3) for preventing metal from diffusing. The composite substrate not only takes account of the homoepitaxy required for GaN epitaxy and improves the quality of the crystals, but also can be used directly to prepare LEDs with vertical structures and significantly reduce costs. The disclosed composite substrate effectively avoids the pollution of experimental instruments by the diffusion and volatilization of a metal material during the growth of MOCVD at high temperature.

主权项

1. A composite substrate for GaN growth, comprising:
a thermally and electrically conductive layer; a GaN mono-crystalline layer on the thermally and electrically conductive layer, wherein the thermally and electrically conductive layer has a melting point greater than 1000° C.; and a protective layer on at least one side wall of the composite substrate and configured to prevent metal from diffusing, wherein the protective layer comprises a material having a melting temperature above 1100° C.