发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A semiconductor device and a manufacturing method thereof are disclosed. The semiconductor device includes a silicon substrate, a spacer, a doped region, and a deep trench isolation (DTI). The silicon substrate has a deep trench. The spacer is formed on an upper portion of the sidewall of the deep trench. The doped region is formed on a lower portion of the sidewall of the deep trench. The deep trench isolation is formed in the deep trench. |
申请公布号 |
US2015130016(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201314076358 |
申请日期 |
2013.11.11 |
申请人 |
United Microelectronics Corp. |
发明人 |
Kao Ching-Hung |
分类号 |
H01L27/146;H01L29/06;H01L21/762 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a silicon substrate having a deep trench; a spacer formed on an upper portion of the sidewall of the deep trench; a doped region formed on a lower portion of the sidewall of the deep trench; and a deep trench isolation (DTI) formed in the deep trench. |
地址 |
Hsinchu TW |