A bolometer is described. A bolometer includes a superconductor-insulator- semiconductor-superconductor structure (91; Fig. 2) or a superconductor-insulator- semiconductor-insulator-superconductor structure (92). The semiconductor comprises an electron gas (10) in a layer of silicon, germanium or silicon-germanium alloy (11) in which valley degeneracy is at least partially lifted. The insulator or a one or both of the insulators may comprise a layer of dielectric material (131, 132). The insulator or a one or both of the insulators may comprise a layer of non-degenerately doped semiconductor.
申请公布号
WO2015067932(A1)
申请公布日期
2015.05.14
申请号
WO2014GB53274
申请日期
2014.11.04
申请人
THE UNIVERSITY OF WARWICK;VTT TECHNICAL RESEARCH CENTRE OF FINLAND