| 摘要 |
PROBLEM TO BE SOLVED: To provide systems and methods of selectively applying negative voltage to word lines during memory device read operation, with reduced leakage current, improved operation at lower operating voltages, and reduced power consumption in a memory array.SOLUTION: A memory device includes a word line logic circuit 110 coupled to a plurality of word lines 108 and adapted to selectively apply a positive voltage V to a selected word line coupled to a selected memory cell that includes a magnetic tunnel junction (MTJ) device and to apply a negative voltage NV to unselected word lines. |
