发明名称 SEMICONDUCTOR STRUCTURE HAVING GUARD RING
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor structure that improves dielectric strength between a conductive coil, a transformer, or a capacitor and a guard ring.SOLUTION: A semiconductor structure includes a conductive wire MF2, a first guard ring GR1, and a second guard ring GR2 provided between the conductive wire MF2 and the first guard ring GR1. The second guard ring GR2 at least partially surrounds a contaminated region DFC. The second guard ring GR2 is electrically connected to the conductive wire MF2. The electrical connection of the second guard ring GR2 to the conductive wire MF2 makes a voltage of the second guard ring GR2 equal to a voltage of the conductive wire MF2. Thus, an electric field does not substantially exist.
申请公布号 JP2015092607(A) 申请公布日期 2015.05.14
申请号 JP20140257793 申请日期 2014.12.19
申请人 INFINEON TECHNOLOGIES AG 发明人 MARTIN KERBER;MATTHIAS STECHER
分类号 H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L27/04 主分类号 H01L21/3205
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