发明名称 SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sputtering method which suppresses adhesion of sputtering particles to a non-erosion region and provide a high deposition property.SOLUTION: A sputtering method includes steps of: introducing sputtering gas from a gas introduction means 12 to a vacuum chamber 11; applying voltage to targets 132a - 132d provided to a position facing a substrate disposed in the vacuum chamber; forming plasma between the target of which end upper surface is covered by a shield member 20 and the substrate; and performing sputtering with the end upper surface of the target covered by a flange 22 arranged above the shield member, such that a covering width is the same as that of an upper part of a non-erosion area formed on the target in the case where the shield is not provided.
申请公布号 JP2015092025(A) 申请公布日期 2015.05.14
申请号 JP20140255498 申请日期 2014.12.17
申请人 ULVAC JAPAN LTD 发明人 NAKAJIMA TEPPEI;KIM JUNG-GUN;TEI HEIWA;LEE SANG-HO
分类号 C23C14/34 主分类号 C23C14/34
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