发明名称 Chip-on-Wafer Structures and Methods for Forming the Same
摘要 A package component includes a substrate, wherein the substrate has a front surface and a back surface over the front surface. A through-via penetrates through the substrate. A conductive feature is disposed over the back surface of the substrate and electrically coupled to the through-via. A first dielectric pattern forms a ring covering edge portions of the conductive feature. An Under-Bump-Metallurgy (UBM) is disposed over and in contact with a center portion of the conductive feature. A polymer contacts a sidewall of the substrate. A second dielectric pattern is disposed over and aligned to the polymer. The first and the second dielectric patterns are formed of a same dielectric material, and are disposed at substantially a same level.
申请公布号 US2015130055(A1) 申请公布日期 2015.05.14
申请号 US201514599872 申请日期 2015.01.19
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Jing-Cheng;Chang Hsin;Lin Shih Ting
分类号 H01L23/28;H01L23/00;H01L23/538 主分类号 H01L23/28
代理机构 代理人
主权项 1. A device comprising: a package component comprising a substrate; a through-via penetrating through the substrate; a conductive feature over a first surface of the package component and electrically coupled to the through-via; a polymer comprising a first portion contacting a sidewall of the substrate, and a second portion overlapped by the package component; and a first dielectric pattern comprising: a first portion over and aligned to the polymer; anda second portion over the substrate and vertically misaligned with the polymer.
地址 Hsin-Chu TW