发明名称 |
Chip-on-Wafer Structures and Methods for Forming the Same |
摘要 |
A package component includes a substrate, wherein the substrate has a front surface and a back surface over the front surface. A through-via penetrates through the substrate. A conductive feature is disposed over the back surface of the substrate and electrically coupled to the through-via. A first dielectric pattern forms a ring covering edge portions of the conductive feature. An Under-Bump-Metallurgy (UBM) is disposed over and in contact with a center portion of the conductive feature. A polymer contacts a sidewall of the substrate. A second dielectric pattern is disposed over and aligned to the polymer. The first and the second dielectric patterns are formed of a same dielectric material, and are disposed at substantially a same level. |
申请公布号 |
US2015130055(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201514599872 |
申请日期 |
2015.01.19 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Jing-Cheng;Chang Hsin;Lin Shih Ting |
分类号 |
H01L23/28;H01L23/00;H01L23/538 |
主分类号 |
H01L23/28 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a package component comprising a substrate; a through-via penetrating through the substrate; a conductive feature over a first surface of the package component and electrically coupled to the through-via; a polymer comprising a first portion contacting a sidewall of the substrate, and a second portion overlapped by the package component; and a first dielectric pattern comprising:
a first portion over and aligned to the polymer; anda second portion over the substrate and vertically misaligned with the polymer. |
地址 |
Hsin-Chu TW |