发明名称 |
Semiconductor Package with Low Profile Switch Node Integrated Heat Spreader |
摘要 |
In one implementation, a semiconductor package includes a patterned conductive carrier including partially etched segments. The semiconductor package also includes a control FET having a control drain attached to a first partially etched segment of the patterned conductive carrier. In addition, the semiconductor package includes a sync FET having a sync source and a sync gate attached to respective second and third partially etched segments of the patterned conductive carrier. The semiconductor package further includes a heat spreading conductive plate situated over a control source of the control FET and over a sync drain of the sync FET so as to couple the control source and the sync drain to a switch node segment of the patterned conductive carrier. |
申请公布号 |
US2015130036(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201414522989 |
申请日期 |
2014.10.24 |
申请人 |
International Rectifier Corporation |
发明人 |
Cho Eung San;Clavette Dan |
分类号 |
H01L23/495;H01L21/52 |
主分类号 |
H01L23/495 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor package comprising:
a patterned conductive carrier; a control FET having a control drain attached to a first partially etched segment of said patterned conductive carrier; a sync FET having a sync source and a sync gate attached to respective second and third partially etched segments of said patterned conductive carrier; a heat spreading conductive plate situated over a control source of said control FET and over a sync drain of said sync FET so as to couple said control source and said sync drain to a switch node segment of said patterned conductive carrier. |
地址 |
El Segundo CA US |