发明名称 Stack Of Horizontally Extending And Vertically Overlapping Features, Methods Of Forming Circuitry Components, And Methods Of Forming An Array Of Memory Cells
摘要 A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The stack has a primary portion and an end portion. At least some of the features extend farther in the horizontal direction in the end portion moving deeper into the stack in the end portion. Operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. Horizontally elongated openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. The lines individually extend from the primary portion into the end portion, and individually laterally about sides of vertically extending portions of both the operative structures and the dummy structures. Sacrificial material that is elevationally between the lines is at least partially removed in the primary and end portions laterally between the horizontally elongated openings. Other aspects and implementations are disclosed.
申请公布号 US2015129935(A1) 申请公布日期 2015.05.14
申请号 US201514602559 申请日期 2015.01.22
申请人 Micron Technology, Inc. 发明人 Tang Sanh D.;Lindsay Roger W.;Parat Krishna K.
分类号 H01L23/52;H01L27/10 主分类号 H01L23/52
代理机构 代理人
主权项
地址 Boise ID US
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