ONE TIME PROGRAMMABLE AND MULTI-LEVEL, TWO-TERMINAL MEMORY CELL

摘要

Providing for one time programmable, multi-level cell two-terminal memory is described herein. In some embodiments, the one time programmable, multi-level cell memory can have a 1 diode 1 resistor configuration, per memory cell. A memory cell according to one or more disclosed embodiments can be programmed to one of a set of multiple logical bits, and can be configured to mitigate or avoid erasure. Accordingly, the memory cell can be employed as a single program, non-erasable memory. Expressed differently, the memory cell can be referred to as a write once read many (WORM) category of memory.

主权项

1. A memory cell, comprising:
an ion donor layer configured to facilitate provision of free ions in response to a program signal applied to the memory cell; a resistive ion migration layer configured to receive ions from the ion donor layer to facilitate formation of a conductive filament within the resistive ion migration layer in response to the program signal, the conductive filament corresponding to one of a set of plural filament states that characterize the memory cell; and a diode component configured to facilitate current flow in a forward direction for the memory cell corresponding with ion migration from the ion donor layer to the resistive ion migration layer, and to resist current flow in a reverse direction.