| 摘要 |
A flexible and/or transparent nonvolatile memory device can be fabricated on flexible substrates, together with ductile materials or transparent conductive oxide materials, and layers with thicknesses that allow flexibility and transparency. The ductile materials can include Ti, Ni, Nb, or Zr. The transparent conductive materials can include indium tin oxide, zinc oxide or aluminum doped zinc oxide. The nonvolatile memory devices can include resistive switching memory, phase change memory, magnetoresistive random access memory, or spin-transfer torque random access memory. |
| 主权项 |
1. A method to form a flexible non-volatile memory, the method comprising
providing a flexible substrate; forming a first electrode layer over the flexible substrate,
wherein the first electrode layer comprises Ti, Ni, Zr, Nb, or any combination thereof,wherein the first electrode layer comprises multiple lines running in a first direction; forming a dielectric layer over the first electrode layer,
wherein the dielectric layer comprises a metal oxide material,wherein the dielectric layer is less than 10 nm thick,wherein the dielectric layer is configured to operate as a switching layer; forming a second electrode layer over the flexible substrate,
wherein the second electrode layer comprises Ti, Ni, Zr, Nb, or any combination thereof,wherein the second electrode layer comprises multiple lines running in a second direction, wherein the second direction forms an angle with the first direction,wherein the dielectric layer comprises multiple portions disposed at cross points of the first and second electrode layers. |
