SELECTIVE ETCH FOR METAL-CONTAINING MATERIALS

摘要

Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

主权项

1. A method of etching metal-containing material, the method comprising:
transferring a substrate into a substrate processing region of a substrate processing chamber, wherein the substrate comprises the metal-containing material; flowing a halogen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents; and etching the metal-containing material from the substrate by flowing the plasma effluents into the substrate processing region through through-holes in a showerhead, wherein the showerhead is disposed between the remote plasma region and the substrate processing chamber.