发明名称 APPARATUS FOR BARRIER INTERFACE PREPARATION OF COPPER INTERCONNECT
摘要 An integrated system for processing a substrate to improve electromigration performance of a copper interconnect, including: a lab-ambient transfer chamber capable of transferring the substrate from a substrate cassette coupled to the lab-ambient transfer chamber into the integrated system; a vacuum transfer chamber operated under vacuum at a pressure less than 1 Torr; a vacuum process module for depositing a metallic barrier layer, wherein the vacuum process module for depositing the metallic barrier layer is coupled to the vacuum transfer chamber, and is operated under vacuum at a pressure less than 1 Torr; a controlled-ambient transfer chamber filled with an inert gas selected from a group of inert gases; and, a deposition process module used to deposit a functionalization layer on the surface of the metallic barrier layer, wherein the deposition process module used to deposit the functionalization layer is coupled to the controlled-ambient transfer chamber.
申请公布号 US2015128861(A1) 申请公布日期 2015.05.14
申请号 US201414558554 申请日期 2014.12.02
申请人 Lam Research Corporation 发明人 Yoon Hyungsuk Alexander;Boyd John;Dordi Yezdi;Redeker Fritz C.
分类号 H01L21/67;C23C16/455;C23C16/06;C23C14/22;C23C18/16;C23C18/38;C23C16/52;C23C16/44 主分类号 H01L21/67
代理机构 代理人
主权项 1. An integrated system for processing a substrate in a controlled environment to enable deposition of a functionalization layer over a metallic barrier layer of a copper interconnect to improve electromigration performance of the copper interconnect, comprising: a lab-ambient transfer chamber capable of transferring the substrate from a substrate cassette coupled to the lab-ambient transfer chamber into the integrated system; a vacuum transfer chamber operated under vacuum at a pressure less than 1 Torr; a vacuum process module for depositing the metallic barrier layer, wherein the vacuum process module for depositing the metallic barrier layer is coupled to the vacuum transfer chamber, and is operated under vacuum at a pressure less than 1 Torr; a controlled-ambient transfer chamber filled with an inert gas selected from a group of inert gases; and a deposition process module used to deposit the functionalization layer on the surface of the metallic barrier layer, wherein the deposition process module used to deposit the functionalization layer is coupled to the controlled-ambient transfer chamber.
地址 Fremont CA US