| 摘要 |
PROBLEM TO BE SOLVED: To provide a system for prevention of microcrack formation or delamination between different layers, prevention of chipping of inorganic dielectric layers, retention of strict kerf width control, or precise ablation depth control.SOLUTION: A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Mask materials, such as a water soluble mask material, are utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process. The patterning exposes regions of the substrate between the ICs. The substrate is plasma etched therein to singulate the ICs. The water soluble material layer is washed off. |
