| 发明名称 |
Lithography Mask and Method of Forming a Lithography Mask |
| 摘要 |
A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoxSiyNz) layer. The first MoxSiyNz layer is over the transparent substrate. A percentage of molybdenum (x) of the first MoxSiyNz layer is between 1 and 2. A percentage of silicon (y) of the first MoxSiyNz layer is between 50 and 55. A percentage of nitride (z) of the first MoxSiyNz layer is between 40 and 50. The first MoxSiyNz layer has an opening therethrough. |
| 申请公布号 |
US2015132685(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201414558097 |
申请日期 |
2014.12.02 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Yoo Chue San;Chen Chun-Lang |
| 分类号 |
G03F1/80;H01L21/033 |
主分类号 |
G03F1/80 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a lithography mask, the method comprising:
forming a molybdenum-containing layer over a transparent substrate, the molybdenum-containing layer comprising a first portion with a first percentage of molybdenum substantially uniformly throughout a thickness of the first portion and a second portion with a second percentage of molybdenum substantially uniformly throughout a thickness of the second portion, the first percentage being different from the second percentage; and forming a first opening through the molybdenum-containing layer. |
| 地址 |
Hsin-Chu TW |
