发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR CHIP, SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor chip according to an embodiment includes forming on a semiconductor substrate a plurality of etching masks each including a protection film to demarcate a plurality of first regions of the substrate protected by the plurality of etching masks and a second region as an exposed region of the substrate, and anisotropically removing the second region by a chemical etching process to form a plurality of grooves each including a side wall at least partially located in the same plane as an end face of the etching mask and a bottom portion reaching a back surface of the substrate, thereby singulating the semiconductor substrate into a plurality of chip main bodies corresponding to the plurality of first regions.
申请公布号 US2015130028(A1) 申请公布日期 2015.05.14
申请号 US201414540360 申请日期 2014.11.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ASANO Yusaku;Higuchi Kazuhito;Tomioka Taizo;Iguchi Tomohiro
分类号 H01L21/78;H01L23/544;H01L23/31;H01L21/308;H01L21/306 主分类号 H01L21/78
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor chip, comprising: forming on a semiconductor substrate a plurality of etching masks each including a protection film to demarcate a plurality of first regions of the semiconductor substrate protected by the plurality of etching masks and a second region as an exposed region of the semiconductor substrate; and anisotropically removing the second region by a chemical etching process to form a plurality of grooves each including a side wall at least partially located in the same plane as an end face of the etching mask and a bottom portion reaching a back surface of the semiconductor substrate, thereby singulating the semiconductor substrate into a plurality of chip main bodies corresponding to the plurality of first regions.
地址 Minato-ku JP