发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR CHIP, SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor chip according to an embodiment includes forming on a semiconductor substrate a plurality of etching masks each including a protection film to demarcate a plurality of first regions of the substrate protected by the plurality of etching masks and a second region as an exposed region of the substrate, and anisotropically removing the second region by a chemical etching process to form a plurality of grooves each including a side wall at least partially located in the same plane as an end face of the etching mask and a bottom portion reaching a back surface of the substrate, thereby singulating the semiconductor substrate into a plurality of chip main bodies corresponding to the plurality of first regions. |
申请公布号 |
US2015130028(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201414540360 |
申请日期 |
2014.11.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ASANO Yusaku;Higuchi Kazuhito;Tomioka Taizo;Iguchi Tomohiro |
分类号 |
H01L21/78;H01L23/544;H01L23/31;H01L21/308;H01L21/306 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor chip, comprising:
forming on a semiconductor substrate a plurality of etching masks each including a protection film to demarcate a plurality of first regions of the semiconductor substrate protected by the plurality of etching masks and a second region as an exposed region of the semiconductor substrate; and anisotropically removing the second region by a chemical etching process to form a plurality of grooves each including a side wall at least partially located in the same plane as an end face of the etching mask and a bottom portion reaching a back surface of the semiconductor substrate, thereby singulating the semiconductor substrate into a plurality of chip main bodies corresponding to the plurality of first regions. |
地址 |
Minato-ku JP |