| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE DEVICE |
| 摘要 |
An embodiment of the present disclosure is directed to a semiconductor device. The semiconductor devise comprises a substrate. An epitaxially grown semiconductor material is disposed over at least a portion of the substrate. A nanotemplate structure is disposed at least partially within the semiconductor material. The nanotemplate structure comprises a plurality of dielectric nanoscale features defining a plurality of nanoscale windows. An air gap is disposed between at least a portion of one or more of the nanoscale features and the semiconductor material. |
| 申请公布号 |
US2015130017(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201414557243 |
申请日期 |
2014.12.01 |
| 申请人 |
HAN SANG M.;LEONHARDT DARIN;GHOSH SWAPNADIP |
发明人 |
HAN SANG M.;LEONHARDT DARIN;GHOSH SWAPNADIP |
| 分类号 |
H01L27/12;H01L27/02 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; an epitaxially grown semiconductor material disposed over at least a portion of the substrate; a nanotemplate structure comprising a plurality of dielectric nanoscale features defining a plurality of nanoscale windows, the nanotemplate structure disposed at least partially within the semiconductor material; and an air gap disposed between at least a portion of a nanoscale feature and the semiconductor material. |
| 地址 |
ALBUQUERQUE NM US |
