Semiconductor Device

摘要

A semiconductor device is provided that includes a composite semiconductor body including a high voltage depletion-mode transistor and a low voltage enhancement-mode transistor. The high voltage depletion-mode transistor is stacked on the low voltage enhancement-mode transistor so that an interface is formed between the high voltage depletion-mode transistor and the low voltage enhancement-mode transistor. The low voltage enhancement-mode transistor includes a current path coupled in series with a current path of the high voltage depletion-mode transistor, and a control electrode is arranged at the interface.

主权项

1. A semiconductor device, comprising:
a composite semiconductor body, comprising: a high voltage depletion-mode transistor; and a low voltage enhancement-mode transistor, the high voltage depletion-mode transistor being stacked on the low voltage enhancement-mode transistor so that an interface is formed between the high voltage depletion-mode transistor and the low voltage enhancement-mode transistor, wherein the low voltage enhancement-mode transistor comprises a current path coupled in series with a current path of the high voltage depletion-mode transistor and a control electrode arranged at the interface.