发明名称 |
SEMICONDUCTOR PACKAGING AND MANUFACTURING METHOD THEREOF |
摘要 |
The present disclosure provides a semiconductor package, which includes a substrate, a passivation layer, a post-passivation interconnect (PPI) having a top surface; and a conductive structure. The top surface of the PPI includes a first region receiving the conductive structure, and a second region surrounding the first region. The second region includes metal derivative transformed from materials made of the first region. The present disclosure provide a method of manufacturing a semiconductor package, including forming a first flux layer covering a portion of a top surface of a PPI; transforming a portion of the top surface of the PPI uncovered by the first flux layer into a metal derivative layer; removing the first flux layer; forming a second flux layer on the first region of the PPI; dropping a solder ball on the flux layer; and forming electrical connection between the solder ball and the PPI. |
申请公布号 |
US2015130020(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201314077528 |
申请日期 |
2013.11.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
SHIH CHAO-WEN;WU KAI-CHIANG;YANG CHING-FENG;LIU MING-KAI;LIANG SHIH-WEI;WANG YEN-PING |
分类号 |
H01L23/00;H01L49/02;H01L23/528 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor package, comprising:
a substrate; a passivation layer over the substrate; a post-passivation interconnect (PPI) having a top surface, positioning over the passivation layer; and a conductive structure electrically connected to the PPI, wherein the top surface of the PPI comprises:
a first region receiving the conductive structure; anda second region surrounding the first region,wherein the second region comprises metal derivative transformed from materials made of the first region. |
地址 |
Hsinchu TW |