发明名称 |
MULTI-TIME PROGRAMMABLE DEVICE |
摘要 |
Devices and methods for forming a device are presented. The device includes a substrate having a device region and first and second isolation regions surrounding the device region. The device includes a multi-time programmable (MTP) memory cell having a single transistor disposed on the device region. The transistor includes a gate having a gate electrode over a gate dielectric which includes a programmable resistive layer. The gate dielectric is disposed over a channel region having first and second sub-regions in the substrate. The gate dielectric disposed above the first and second sub-regions has different characteristics such that when the memory cell is programmed, a portion of the programmable resistive layer above one of the first or second sub-region is more susceptible for programming relative to portion of the programmable resistive above the other first or second sub-region. |
申请公布号 |
US2015129975(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201314078554 |
申请日期 |
2013.11.13 |
申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
ZHENG Ping;TOH Eng Huat;QUEK Elgin Kiok Boone |
分类号 |
H01L27/115;H01L49/02 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Singapore SG |