| 摘要 |
Disclosed are a junction modulation-type tunnelling field effect transistor and a preparation method therefor, which belong to the field of field effect transistor logic devices and circuits in a very large-scale integrated (ULSI) circuit of a CMOS. By using a PN junction provided by a highly-doped source region surrounded on three sides of a vertical channel region, the tunnelling field effect transistor can effectively deplete the channel region, so that the energy band of a lower surface channel of the gate is increased. When energy band tunnelling occurs in a device, an energy band steeper than and a tunnelling barrier width narrower than a traditional TFET can be obtained, so that the effect of a steep tunnelling junction doping concentration gradient is realized equivalently, thereby substantially improving the subthreshold characteristic of the traditional TFET and increasing the conduction current of a device at the same time. In the condition of being compatible with an existing CMOS process, on the one hand, the present invention can effectively suppress a bipolar conduction effect of a device, and can suppress the parasitic tunnelling current at a source junction corner in a small size at the same time, so that the effect of the steep source junction doping concentration can be realized equivalently. |
