| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonlinear element (e.g., a diode) which uses an oxide semiconductor and has excellent rectification characteristics.SOLUTION: A thin-film transistor which has an oxide semiconductor having a hydrogen concentration of 5×10/cmor less is configured such that a work function &phgr;ms of a source electrode in contact with the oxide semiconductor, a work function &phgr;md of a drain electrode in contact with the oxide semiconductor, and an electron affinity χ of the oxide semiconductor satisfy a relation of &phgr;ms≤χ<&phgr;md. Further, a gate electrode and the drain electrode of the thin-film transistor are electrically connected, whereby the nonlinear element having more excellent rectification characteristics can be achieved. |
