SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves microfabrication while maintaining good characteristics and uses an oxide semiconductor.SOLUTION: A semiconductor device comprises: an oxide semiconductor layer; a source electrode and a drain electrode which are electrically connected with the oxide semiconductor layer; a gate insulation layer which covers the source electrode and the drain electrode; and a gate electrode on the gate insulation layer. A thickness of the oxide semiconductor layer is not less than 1 nm and not more than 10 nm. In the gate insulation layer, when assuming that relative permittivity of a material used for the gate insulation layer is &egr;and a thickness of the gate insulation layer is d, &egr;/d satisfies relation of not less than 0.08(nm) and not more than 7.9(nm). A distance between the source electrode and the drain electrode in not less than 10 nm and not more than 1 μm.