| 发明名称 |
MECHANISMS FOR FORMING SEMICONDUCTOR DEVICE HAVING STABLE DISLOCATION PROFILE |
| 摘要 |
Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions. |
| 申请公布号 |
US2015132913(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201314080220 |
申请日期 |
2013.11.14 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
HONG Min-Hao;JANGJIAN Shiu-Ko;LEE Chih-Tsung;LIAO Miao-Cheng |
| 分类号 |
H01L29/08;H01L29/78;H01L29/66 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
providing a semiconductor substrate having a gate structure; forming an opening adjacent to a side of the gate structure; forming a first part of an epitaxial growth structure in the opening; and forming a second part of the epitaxial growth structure in the opening, wherein the first part and the second part of the epitaxial growth structure are formed along different directions, and the first part and the second part of the epitaxial growth structure are laterally positioned in the opening. |
| 地址 |
Hsin-Chu TW |
