发明名称 IMPLEMENTING SENSE AMPLIFIER FOR SENSING LOCAL WRITE DRIVER WITH BOOTSTRAP WRITE ASSIST FOR SRAM ARRAYS
摘要 A method and circuit for implementing sense amplifiers for sensing local write driver with bootstrap write assist for Static Random Access Memory (SRAM) arrays, and a design structure on which the subject circuit resides are provided. The circuit includes a sense amplifier used in both read and write operations with a write assist boost circuitry. The sense amplifier captures and amplifies write data at a selected SRAM cell column and drives the write data onto local bit lines. The write assist boost circuitry temporarily supplies an increased device voltage differential to the SRAM cell during write operations to significantly increase SRAM cell write ability.
申请公布号 US2015131368(A1) 申请公布日期 2015.05.14
申请号 US201314077559 申请日期 2013.11.12
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Adams Chad A.;Gerhard Elizabeth L.;Scherer Jeffrey M.
分类号 G11C11/419;G06F17/50 主分类号 G11C11/419
代理机构 代理人
主权项 1. A circuit for implementing sense amplifiers for sensing local write driver with bootstrap write assist for Static Random Access Memory (SRAM) arrays comprising: a SRAM cell column including a plurality of SRAM cells; a sense amplifier coupled to said SRAM cell column used in both read and write operations; said sense amplifier capturing and amplifying write data and driving the write data onto local bit lines; write assist boost circuitry coupled to said sense amplifier temporarily supplying an increased device voltage differential to said SRAM cell during write operations; said write assist boost circuitry including a boost capacitor and said sense amplifier includes a delay stage inverter for boosting a common bit line source node below source voltage during the write operation.
地址 Armonk NY US