THIN FILM TRANSISTOR HAVING THE TAPER ANGLE OF THE ACTIVE PATTERN IS GREATER THAN THE TAPER ANGLE OF THE SOURCE METAL PATTERN

摘要

A thin film transistor includes a gate electrode, an active pattern overlapping with the gate electrode and including a semiconductive oxide, and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from the source electrode. The active pattern underlaps an entire portion of a lower surface of the source metal pattern and minimally protrudes beyond lateral ends of the source metal pattern due to the active pattern having sidewall taper angles that are substantially greater than corresponding and adjacent sidewall taper angles of the overlying source metal pattern. Thus parasitic capacitance may be reduced and performance enhanced.

主权项

1. A thin film transistor structure comprising:
a gate electrode disposed on a substrate; an active pattern overlapping the gate electrode and comprising a semiconductive oxide; and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from one another, wherein the active pattern underlaps an entire portion of a lower surface of the source metal pattern, and has a base and a sidewall defining a first taper angle that is greater than a second taper angle defined by and adjacent sidewall and the lower surface of the source metal pattern.