发明名称 |
SYSTEMS AND METHODS FOR A SEMICONDUCTOR STRUCTURE HAVING MULTIPLE SEMICONDUCTOR-DEVICE LAYERS |
摘要 |
A semiconductor structure having multiple semiconductor-device layers is provided. The semiconductor structure comprises a first buried oxide and a first semiconductor device layer fabricated above the first buried oxide. The first semiconductor device layer comprises a patterned top surface. A blanket layer comprising insulator material is fabricated over the patterned surface. The semiconductor structure further comprises a second buried oxide bonded to the blanket layer and a second semiconductor device layer fabricated above the second buried oxide. |
申请公布号 |
KR20150052771(A) |
申请公布日期 |
2015.05.14 |
申请号 |
KR20140122102 |
申请日期 |
2014.09.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN YI TANG;TSAI CHUN HSIUNG;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|