发明名称 |
RESONANT GATE DRIVER FOR DRIVING MOSFET |
摘要 |
Disclosed is a resonant gate driver for driving a MOSFET. The gate driver excludes a resistance element and includes aan inductor, a capacitor, and a switch. The gate driver generates a pulse for driving a MOSFT by using energy stored in the inductor or the capacitor using the opening/closing of the switch. Because the gate driver excludes a resistance element, there is no gate loss. Therefore, the MOSFET can be driven at low power loss. |
申请公布号 |
KR101519850(B1) |
申请公布日期 |
2015.05.14 |
申请号 |
KR20140086030 |
申请日期 |
2014.07.09 |
申请人 |
CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATIONFOUNDATION |
发明人 |
KWAK, SANG SHIN;KIM, IE KIM |
分类号 |
H03K17/687;H03K17/04 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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