发明名称 RESONANT GATE DRIVER FOR DRIVING MOSFET
摘要 Disclosed is a resonant gate driver for driving a MOSFET. The gate driver excludes a resistance element and includes aan inductor, a capacitor, and a switch. The gate driver generates a pulse for driving a MOSFT by using energy stored in the inductor or the capacitor using the opening/closing of the switch. Because the gate driver excludes a resistance element, there is no gate loss. Therefore, the MOSFET can be driven at low power loss.
申请公布号 KR101519850(B1) 申请公布日期 2015.05.14
申请号 KR20140086030 申请日期 2014.07.09
申请人 CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATIONFOUNDATION 发明人 KWAK, SANG SHIN;KIM, IE KIM
分类号 H03K17/687;H03K17/04 主分类号 H03K17/687
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