SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device with an under-bump metallurgy (UBM) over a dielectric is provided. The UBM has a trench configured to be offset from a central point of the UBM. A distance between the center of the trench to the edge of the UBM is longer than a distance between the center of the trench to the opposite edge of the UBM. A probe pin is configured to contact the UBM and collect measurement data.