Fin Structure for a FinFET Device

摘要

A fin structure for a fin field effect transistor (FinFET) device is provided. The device includes a substrate, a first semiconductor material disposed on the substrate, a shallow trench isolation (STI) region disposed over the substrate and formed on opposing sides of the first semiconductor material, and a second semiconductor material forming a first fin and a second fin disposed on the STI region, the first fin spaced apart from the second fin by a width of the first semiconductor material. The fin structure may be used to generate the FinFET device by forming a gate layer formed over the first fin, a top surface of the first semiconductor material disposed between the first and second fins, and the second fin.

主权项

1. A method of forming a fin field effect transistor (FinFET) device, the method comprising:
forming a first fin, the first fin having isolation regions on opposing sides; recessing the isolation regions, the recessing exposing exposed sidewalls of the first fin; forming a second fin and a third fin along the exposed sidewalls of the first fin; and recessing the first fin below an upper surface of the second fin and the third fin.