发明名称 Magnetoresistive magnetic field gradient sensor
摘要 Disclosed is a magnetoresistive magnetic field gradient sensor, comprising a substrate, a magnetoresistive bridge and a permanent magnet respectively disposed on the substrate; the magnetoresistive bridge comprises two or more magnetoresistive arms; each magnetoresistive arm consists of one or more magnetoresistive elements; each magnetoresistive element is provided with a magnetic pinning layer; the magnetic pinning layers of all the magnetoresistive elements have the same magnetic moment direction; the permanent magnet is disposed adjacent to each magnetoresistive arm to provide a bias field, and to zero the offset of the response curve of the magnetoresistive element; the magnetoresistive gradiometer includes wire bonding pads that can be electrically interconnected using wire bonding to an ASIC or to the lead frame of a semiconductor chip package.
申请公布号 US2015130455(A1) 申请公布日期 2015.05.14
申请号 US201314384666 申请日期 2013.01.29
申请人 Jiangsu Multidimension Technology Co., Ltd 发明人 Bai Jianmin;Deak James Geza;Liu Mingfeng;Shen Weifeng
分类号 G01R33/09;G01R17/00 主分类号 G01R33/09
代理机构 代理人
主权项 1. A magnetoresistive magnetic field gradiometer sensor, comprising a magnetoresistive bridge, wherein the magnetoresistive bridge comprises a multiplicity of magnetoresistive arms that include one or more magnetoresistive element, wherein each magnetoresistive element within the magnetoresistive bridge has a magnetic pinning layer with a magnetic moment aligned in the same direction, a permanent magnet, wherein the permanent magnet is positioned adjacent to each of the magnetoresistive arms and generates a bias magnetic field to zero the offset of the transfer curve of the magnetoresistive element, a substrate on which the magnetoresistive bridge and the permanent magnets are deposited, a wire bond pad used to electrically interconnect magnetoresistive magnetic field gradiometer sensor to ASIC chip or to a terminal of a package lead frame by bond wires.
地址 Zhangjiagang, JS CN