| 发明名称 |
THERMALLY CONDUCTIVE STRUCTURE FOR HEAT DISSIPATION IN SEMICONDUCTOR PACKAGES |
| 摘要 |
A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip. |
| 申请公布号 |
US2015130045(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201314075139 |
申请日期 |
2013.11.08 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
TSENG Chun-Hao;KUO Ying-Hao;YEE Kuo-Chung |
| 分类号 |
H01L23/34;H01L23/29;H01L23/00;H01L21/56 |
主分类号 |
H01L23/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor package, comprising:
providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate; depositing an insulating barrier layer above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer; and forming a thermally conductive layer over the insulating barrier layer to at least partially encapsulate the at least one chip. |
| 地址 |
Hsinchu TW |
